Three dimensional boron distribution in heavily doped silicon epilayers resolved by atom probe tomography

Details Three dimensional boron distribution in heavily doped silicon epilayers resolved by atom probe tomography Three dimensional boron distribution in heavily doped silicon epilayers resolved by atom probe tomography

2011-03-22

arxiv.org/abs/1103.4409v1

Physics

Condensed Matter

Superconductivity

3 pages

Scientific paper

We performed atom probe tomography to analyse the three dimensional distribution of boron atoms incorporated by gas immersion laser doping into crystalline silicon, well above the solubility limit. Thanks to the high speed of recrystallization, the boron atoms are homogeneously distributed on the atomic scale, without creating clusters or precipitates. A sharp 2D interface between the doped silicon region and the undoped substrate was also observed.

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