Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states

Details Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states

2003-03-07

arxiv.org/abs/cond-mat/0303130v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, incl 2 figs. RevTex

Scientific paper

We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift plasma instability, developing {\em near the edge} of the system under the microwave radiation. The proposed scheme qualitatively agrees with the microwave power, temperature, frequency, magnetic field, and mobility dependencies of the measured photosignal.

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