Physics – Condensed Matter
Scientist
Physics
Condensed Matter
Scientist
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier
Enhanced tunneling across nanometer-scale metal-semiconductor interfaces
Gate-induced ionization of single dopant atoms
Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state
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