Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier

Details Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier

2003-09-05

arxiv.org/abs/cond-mat/0309139v1

Physics

Condensed Matter

submitted to PRB

Scientific paper

10.1103/PhysRevB.69.125324

We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the emitter Fermi level in our devices is a field-independent reference energy, we are able to directly observe the diamagnetic shift of the B^+ level. This is contrary to the situation in magneto-optical spectroscopy, where the shift is absorbed in the measured ionization energy.

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