Gate-induced ionization of single dopant atoms

Details Gate-induced ionization of single dopant atoms Gate-induced ionization of single dopant atoms

2003-09-05

arxiv.org/abs/cond-mat/0309134v1

Physics

Condensed Matter

5 pages, 3 EPS-figures. To be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.68.193302

Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field ionization. The dopant is modelled as a hydrogen-like impurity and the Schrodinger equation is solved by a variational method. We find that--depending on the separation of the dopant and the gate--the electron transfer is either gradual or abrupt, defining two distinctive regimes for the gate-induced ionization process.

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