Physics – Condensed Matter
Scientific paper
2001-10-12
Physics
Condensed Matter
3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Lett
Scientific paper
10.1063/1.1467980
We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.
Klapwijk Teum M.
Rogge Sven
Smit G. D. J.
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