Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

Details Enhanced tunneling across nanometer-scale metal-semiconductor interfaces Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

2001-10-12

arxiv.org/abs/cond-mat/0110256v2

Physics

Condensed Matter

3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Lett

Scientific paper

10.1063/1.1467980

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.

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