Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics

Details Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics

2003-09-05

arxiv.org/abs/cond-mat/0309137v1

Physics

Condensed Matter

6 pages, 4 EPS figures. Submitted

Scientific paper

10.1103/PhysRevB.69.035338

We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter in the device-to-device conductance towards smaller device sizes. The low-temperature measurements exhibit pronounced features, caused by resonant tunneling through electronic states of individual dopant atoms. We demonstrate by a statistical analysis that this behavior can be explained by the presence of randomly distributed individual dopant atoms in the space charge region.

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