Write-once read-many-times memory based on a single layer of Pentacene

Details Write-once read-many-times memory based on a single layer of Pentacene Write-once read-many-times memory based on a single layer of Pentacene

2009-08-10

arxiv.org/abs/0908.1371v1

IEEE Electron Device Letters 30, 4 (2009) 343-345

Physics

Condensed Matter

Materials Science

3 pages, 4 figures

Scientific paper

10.1109/LED.2009.2013976

We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an ON/OFF current ratio as high as nearly 1000000 which was two orders of magnitude higher than previous results, and the storage time was more than 576 hrs. The current transition process is attributed to the formation and damage of the interface dipole at different electric fields, in which the current conduction showed a transition from Ohmic conductive current to Fowler?Nordheim tunnelling current. After the transition from ON state to OFF state, the device tended to remain in OFF state even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times (WORM) memory.

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