Vertical Field-Effect Transistor Based on Wavefunction Extension

Details Vertical Field-Effect Transistor Based on Wavefunction Extension Vertical Field-Effect Transistor Based on Wavefunction Extension

2010-08-03

arxiv.org/abs/1008.0668v4

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.84.085301

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

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