Unification of bulk and interface electroresistive switching in oxide systems

Details Unification of bulk and interface electroresistive switching in oxide systems Unification of bulk and interface electroresistive switching in oxide systems

2008-05-20

arxiv.org/abs/0805.3159v3

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures, accepted in PRB

Scientific paper

10.1103/PhysRevB.77.233103

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.

Affiliated with

Also associated with

No associations

Rating

Unification of bulk and interface electroresistive switching in oxide systems does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Unification of bulk and interface electroresistive switching in oxide systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unification of bulk and interface electroresistive switching in oxide systems will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-289590