Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Details Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

2002-01-26

arxiv.org/abs/cond-mat/0201492v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures (RevTex4)

Scientific paper

10.1103/PhysRevLett.89.107203

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of the magnetization provides an estimate Tc = 385K of the Curie temperature that exceeds the experimental value, Tc = 270K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330K is attributed to disorder and proximity to a metal-insulating transition.

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