Two-Carrier Transport in Epitaxially Grown MnAs

Details Two-Carrier Transport in Epitaxially Grown MnAs Two-Carrier Transport in Epitaxially Grown MnAs

2001-05-25

arxiv.org/abs/cond-mat/0105499v1

Phys. Rev. B. 64, 052408 (2001)

Physics

Condensed Matter

Materials Science

10 pages + 3 figures; to be published In Phys. Rev. B

Scientific paper

10.1103/PhysRevB.64.052408

Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes, and at low temperatures by electrons. We also observe distinct changes in the magnetoresistance associated with the transition between the electron- and hole-dominated transport regimes. These results are of direct relevance to MnAs/semiconductor hybrid heterostructures and their exploitation in electronic and optical spin injection experiments.

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