Tunable quantum spin Hall effect in double quantum wells

Details Tunable quantum spin Hall effect in double quantum wells Tunable quantum spin Hall effect in double quantum wells

2011-07-20

arxiv.org/abs/1107.4108v3

Physical Review B 85, 125309 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 8 figures, extended version (accepted Phys. Rev. B)

Scientific paper

10.1103/PhysRevB.85.125309

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of helical edge modes protected by time-reversal symmetry, has been demonstrated in HgTe-based quantum wells (QWs) with an inverted bandgap. We analyze the topological properties of a generically coupled HgTe-based double QW (DQW) and show how in such a system a TI phase can be driven by an inter-layer bias voltage, even when the individual layers are non-inverted. We argue, that this system allows for similar (layer-)pseudospin based physics as in bilayer graphene but with the crucial absence of a valley degeneracy.

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