Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Details Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

2009-05-27

arxiv.org/abs/0905.4358v4

Nano Letters 10, 11 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures, journal

Scientific paper

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

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