The origin of the red luminescence in Mg-doped GaN

Details The origin of the red luminescence in Mg-doped GaN The origin of the red luminescence in Mg-doped GaN

2006-02-04

arxiv.org/abs/cond-mat/0602104v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.2220552

Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysis provides strong evidence that the emission is due to recombination in which electrons both from effective mass donors and from deeper donors recombine with deep centers, the deep centers being vacancy-related defects.

Affiliated with

Also associated with

No associations

Rating

The origin of the red luminescence in Mg-doped GaN does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The origin of the red luminescence in Mg-doped GaN, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The origin of the red luminescence in Mg-doped GaN will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-699119