The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

Details The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

2010-05-24

arxiv.org/abs/1005.4325v1

Appl. Phys. Lett. 96, 202105 (2010)

Physics

Condensed Matter

Materials Science

7 pages, 3 figures

Scientific paper

10.1063/1.3428770

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.

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