Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
1998-07-20
Physica B 249-251, 180 (1998)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
RevTex (4 pages) including 2 postscript figures. To appear in Physica B, 1998
Scientific paper
10.1016/S0921-4526(98)00094-5
We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate deposition on modulation doped GaAs/GaAlAs heterostructures. The resulting subband separations are up to 20 meV, and as a consequence the quantized conductance can be followed at temperatures up to 30 K, an order of magnitude higher than in conventional split gate devices. We observe pronounced quasi plateaus at several of the lowest conductance steps all the way from their formation around 1 K to 30 K, where the entire conductance quantization is smeared out thermally. We study the deviation of the conductance from ideal integer quantization as a function of temperature, and we find an activated behavior, exp(-T_a/T), with a density dependent activation temperature T_a of the order of 2 K. We analyze our results in terms of a simple theoretical model involving scattering against plasmons in the constriction.
Bruus Henrik
Forchel Alfred
Hollingbery J.
Jensen Joseph B.
Kristensen Anders
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