Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Details Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

2009-02-11

arxiv.org/abs/0902.1814v1

J Mater Sci: Mater Electron (2008) 19:S289-S293

Physics

Condensed Matter

Materials Science

Scientific paper

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

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