Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

Details Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

2005-11-28

arxiv.org/abs/cond-mat/0511668v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.73.045334

We determine the spin susceptibility $\chi$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $\chi$ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to $4\times10^{11} cm^{-2}$. In the high density limit, $\chi$ tends correctly towards $\chi\to 1$ and compare well with recent theory.

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