Spin-dependent tunnelling through a symmetric barrier

Details Spin-dependent tunnelling through a symmetric barrier Spin-dependent tunnelling through a symmetric barrier

2003-01-08

arxiv.org/abs/cond-mat/0301098v2

Phys. Rev. B 67, 201304(R) (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, Submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.67.201304

The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.

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