Size scaling of the addition spectra in silicon quantum dots

Details Size scaling of the addition spectra in silicon quantum dots Size scaling of the addition spectra in silicon quantum dots

2004-11-09

arxiv.org/abs/cond-mat/0411236v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.71.033305

We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We compare the standard deviation of the addition spectra with theory in the high electron concentration regime. We find that the standard deviation scales as the inverse area of the dot and its absolute value is comparable to the energy spacing of the one particle spectrum.

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