Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Details Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

2006-10-16

arxiv.org/abs/cond-mat/0610436v1

Phys. Rev. Lett. 95, 257402 (2005)

Physics

Condensed Matter

Materials Science

5 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.95.257402

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.

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