Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

Details Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

2011-10-28

arxiv.org/abs/1110.6431v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version

Scientific paper

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.

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