Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

Details Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

2011-07-20

arxiv.org/abs/1107.4085v1

Phys. Rev. B 84, 115325 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.84.115325

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources.

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