Single hole transistor in a p-Si/SiGe quantum well

Details Single hole transistor in a p-Si/SiGe quantum well Single hole transistor in a p-Si/SiGe quantum well

2000-09-21

arxiv.org/abs/cond-mat/0009323v2

Appl. Phys. Lett. 78, 341 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.1342040

A single hole transistor is patterned in a p-Si/SiGe quantum well by applying
voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing
the etched semiconductor surface and the mesa walls before evaporation of the
top gates. Pronounced Coulomb blockade effects are observed at small coupling
of the transistor island to source and drain.

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