Single crystal field-effect transistors based on an organic selenium-containing semiconductor

Details Single crystal field-effect transistors based on an organic selenium-containing semiconductor Single crystal field-effect transistors based on an organic selenium-containing semiconductor

2004-11-09

arxiv.org/abs/cond-mat/0411207v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1143/JJAP.44.3712

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

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