Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

Details Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

2003-11-09

arxiv.org/abs/cond-mat/0311191v1

Physics

Condensed Matter

Materials Science

4 pages, 6 figures, submitted to PRB

Scientific paper

We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.

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