Shot noise of a multiwalled carbon nanotube field effect transistor

Details Shot noise of a multiwalled carbon nanotube field effect transistor Shot noise of a multiwalled carbon nanotube field effect transistor

2006-06-26

arxiv.org/abs/cond-mat/0606661v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures, submitted

Scientific paper

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\mu{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.

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