Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors

Details Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors

2010-11-18

arxiv.org/abs/1011.4227v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 figures

Scientific paper

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocity.

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