Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

Details Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

2008-03-24

arxiv.org/abs/0803.3464v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 4 figures. Phys. Rev. Lett. in press

Scientific paper

10.1103/PhysRevLett.100.206803

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.

Affiliated with

Also associated with

No associations

Rating

Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-348380