Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Details Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

2009-06-29

arxiv.org/abs/0906.5306v1

Applied Physics Letters 95, 053114(2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 5 figures

Scientific paper

10.1063/1.3200237

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm).

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