Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Details Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

2010-10-30

arxiv.org/abs/1011.0062v1

Physics

Condensed Matter

Materials Science

7 pages, 5 figures

Scientific paper

The role of spontaneous and piezoelectric polarization in III-V nitride
heterostructure devices is discussed. Problems as well as opportunities in
incorporating polarization in abrupt and graded heterojunctions composed of
binary, ternary, and quaternary nitrides are outlined.

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