Polarization-engineered GaN/InGaN/GaN tunnel diodes

Details Polarization-engineered GaN/InGaN/GaN tunnel diodes Polarization-engineered GaN/InGaN/GaN tunnel diodes

2010-08-24

arxiv.org/abs/1008.4124v1

Appl. Phys. Lett. 97, 203502 (2010)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures

Scientific paper

10.1063/1.3517481

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

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