Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces

Details Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces

1999-09-20

arxiv.org/abs/cond-mat/9909283v1

Phys. Rev. Lett. 83, 2226 (1999)

Physics

Condensed Matter

Materials Science

RevTeX, 5 pages including 2 figures

Scientific paper

10.1103/PhysRevLett.83.2226

Accurate atomic coordinates of the room-temperature (root3xroot3)R30degree and low-temperature (3x3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4-sites in the (root3xroot3)R30degree structure. In the low temperature phase one of the three Sn atoms per (3x3) unit cell is displaced outwards by 0.26 +/- 0.04 A relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.

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