Orientation dependence of the elastic instability on strained SiGe films

Details Orientation dependence of the elastic instability on strained SiGe films Orientation dependence of the elastic instability on strained SiGe films

2010-11-16

arxiv.org/abs/1011.3726v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally that this instability develops on Si(001) but not on Si(111) even after long annealing. Using a continuum description of this instability, we determine the origin of this difference. When modeling surface diffusion in presence of wetting, elasticity and surface energy anisotropy, we find a retardation of the instability on Si(111) due to a strong dependence of the instability onset as function of the surface stiffness. This retardation is at the origin of the inhibition of the instability on experimental time scales even after long annealing.

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