Orbital photogalvanic effects in quantum-confined structures

Details Orbital photogalvanic effects in quantum-confined structures Orbital photogalvanic effects in quantum-confined structures

2009-12-07

arxiv.org/abs/0912.0974v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 5 figures, two culumnes

Scientific paper

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

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