Optical imaging of resonant electrical carrier injection into individual quantum dots

Details Optical imaging of resonant electrical carrier injection into individual quantum dots Optical imaging of resonant electrical carrier injection into individual quantum dots

2010-07-16

arxiv.org/abs/1007.2733v1

Phys. Rev. Lett. 105, 257401 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages

Scientific paper

10.1103/PhysRevLett.105.257401

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.

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