Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Details Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

2009-08-26

arxiv.org/abs/0908.3822v3

Applied Physics Letters 95, 172105 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 new references added

Scientific paper

Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).

Affiliated with

Also associated with

No associations

Rating

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-624679