Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

Details Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

2011-04-27

arxiv.org/abs/1104.5181v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

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