Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

Details Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

2011-03-24

arxiv.org/abs/1103.4664v1

Physics

Condensed Matter

Materials Science

Scientific paper

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of -16% at 2.8 K. We attribute this to the formation of non-collinear spin structures in the NiO layer as observed by XMCD. The magnetic moments of the interface Ni atoms tilt from the easy axis due to exchange interaction and the tilting angle decreases with increasing the NiO thickness. The experimental observations are further support by non-collinear spin density functional theory.

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