NbSe3: Effect of Uniaxial Stress on the Threshold Field and Fermiology

Details NbSe3: Effect of Uniaxial Stress on the Threshold Field and Fermiology NbSe3: Effect of Uniaxial Stress on the Threshold Field and Fermiology

1997-12-04

arxiv.org/abs/cond-mat/9712056v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.57.14576

We have measured the effect of uniaxial stress on the threshold field ET for the motion of the upper CDW in NbSe3. ET exhibits a critical behavior, ET ~ (1 - e/ec)^g, wher e is the strain, and ec is about 2.6% and g ~ 1.2. This ecpression remains valid over more than two decades of ET, up to the highest fields of about 1.5keV/m. Neither g nor ec is very sensitive to the impurity concentraction. The CDW transition temperature Tp decreases linearly with e at a rate dTp/de = -10K/%, and it does not show any anomaly near ec. Shubnikov de-Haas measurements show that the extremal area of the Fermi surface decreases with increasing strain. The results suggest that there is an intimate relationship between pinning of the upper CDW and the Fermiology of NbSe3.

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