Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Details Measurement of valley splitting in high-symmetry Si/SiGe quantum dots Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

2010-12-06

arxiv.org/abs/1012.1363v2

Appl. Phys. Lett. 98, 123118 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.3569717

We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 {\mu}eV, suggesting the presence of atomically sharp interfaces in our heterostructures.

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