Mapping of ion beam induced current changes in FinFETs

Details Mapping of ion beam induced current changes in FinFETs Mapping of ion beam induced current changes in FinFETs

2008-09-11

arxiv.org/abs/0809.2113v2

Physics

Condensed Matter

Other Condensed Matter

IBMM 2008 conference proceeding

Scientific paper

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

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