Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

Details Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

2008-09-22

arxiv.org/abs/0809.3654v2

Physics

Condensed Matter

Other Condensed Matter

4 pages, 4 figures

Scientific paper

Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.

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