Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy

Details Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy

2005-04-01

arxiv.org/abs/cond-mat/0504038v1

Phys. Rev. B 71, 241307(R) (2005)

Physics

Condensed Matter

Materials Science

Submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.71.241307

We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field parallel to the current density) reveal "spikes" that are antisymmetric with respect to the direction of the magnetic field. These anomalies always occur during magnetization reversal, as indicated by a simultaneous change in sign of the anomalous Hall effect. The data suggest that the antisymmetric anomalies originate in anomalous Hall effect contributions to the longitudinal resistance when domain walls are located between the voltage probes. This interpretation is reinforced by carrying out angular sweeps of $\vec{H}$, revealing an antisymmetric dependence on the helicity of the field sweep.

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