Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

Details Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

2011-10-25

arxiv.org/abs/1110.5437v1

Applied Physics Letters 98, 112102, 2011

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3567546

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.

Affiliated with

Also associated with

No associations

Rating

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-94246