Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Details Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

2011-09-22

arxiv.org/abs/1109.4804v4

AIP Advances 2, 2, 022114 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages

Scientific paper

10.1063/1.4707165

We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

Affiliated with

Also associated with

No associations

Rating

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-262975