Local Hall effect in hybrid ferromagnetic/semiconductor devices

Details Local Hall effect in hybrid ferromagnetic/semiconductor devices Local Hall effect in hybrid ferromagnetic/semiconductor devices

2006-11-17

arxiv.org/abs/cond-mat/0611451v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages with 4 fugures. Accepted for publication in Applied Physics Letters

Scientific paper

We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, we confirmed that our data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

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