Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

Details Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

2003-01-16

arxiv.org/abs/cond-mat/0301301v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures

Scientific paper

10.1103/PhysRevB.68.241308

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than $e^{2}/h$. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

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