Kondo effects in a C_60 single-molecule transistor

Details Kondo effects in a C_60 single-molecule transistor Kondo effects in a C_60 single-molecule transistor

2008-09-16

arxiv.org/abs/0809.2700v1

phys. stat. sol. (b) 245, no. 10, 1994-1997 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1002/pssb.200879621

We have used the electromigration technique to fabricate a $\rm{C_{{60}}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.

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